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ti.\*:("Selected papers from the 6th International SiGe Technology and Device Meeting (ISTDM 2012)")

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Selected papers from the 6th International SiGe Technology and Device Meeting (ISTDM 2012)KOESTER, Steven J; KING LIU, Tsu-Jae; HARTMANN, Jean-Michel et al.Solid-state electronics. 2013, Vol 83, issn 0038-1101, 120 p.Conference Proceedings

Phosphorus atomic layer doping in Ge using RPCVDYAMAMOTO, Yuji; KURPS, Rainer; MAI, Christian et al.Solid-state electronics. 2013, Vol 83, pp 25-29, issn 0038-1101, 5 p.Conference Paper

The SiGeSn approach towards Si-based lasersSUN, G; YU, S.-Q.Solid-state electronics. 2013, Vol 83, pp 76-81, issn 0038-1101, 6 p.Conference Paper

Fabrication of bonded GeOI substrates with thin Al2O3/SiO2 buried oxide layersMORIYAMA, Yoshihiko; IKEDA, Keiji; KAMIMUTA, Yuuichi et al.Solid-state electronics. 2013, Vol 83, pp 42-45, issn 0038-1101, 4 p.Conference Paper

n―Si―p-Si1―xGex nanowire arrays for thermoelectric power generationBIN XU; CHUANBO LI; MYRONOV, Maksym et al.Solid-state electronics. 2013, Vol 83, pp 107-112, issn 0038-1101, 6 p.Conference Paper

Low temperature RPCVD epitaxial growth of Si1―xGex using Si2H6 and Ge2H6WIRTHS, S; BUCA, D; TIEDEMANN, A. T et al.Solid-state electronics. 2013, Vol 83, pp 2-9, issn 0038-1101, 8 p.Conference Paper

Charge carrier traffic at self-assembled Ge quantum dots on SiKANIEWSKA, M; ENGSTRÖM, O; KARMOUS, A et al.Solid-state electronics. 2013, Vol 83, pp 99-106, issn 0038-1101, 8 p.Conference Paper

Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drainsHARTMANN, J. M; BENEVENT, V; DUTARTRE, D et al.Solid-state electronics. 2013, Vol 83, pp 10-17, issn 0038-1101, 8 p.Conference Paper

Band-edge electronic structures, and pre-existing defects in remote plasma deposited (RPD) non-crystalline (nc-) SiO2 and GeO2LUCOVSKY, Gerald.Solid-state electronics. 2013, Vol 83, pp 30-36, issn 0038-1101, 7 p.Conference Paper

Epitaxial growth and anisotropic strain relaxation of Ge1―xSnx layers on Ge(110) substratesASANO, Takanori; SHIMURA, Yosuke; TAOKA, Noriyuki et al.Solid-state electronics. 2013, Vol 83, pp 71-75, issn 0038-1101, 5 p.Conference Paper

Effect of gate metal on chemical bonding state in metal/Pr-oxide/Ge gate stack structureKATO, Kimihiko; SAKASHITA, Mitsuo; TAKEUCHI, Wakana et al.Solid-state electronics. 2013, Vol 83, pp 56-60, issn 0038-1101, 5 p.Conference Paper

Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallizationYINJIE DING; RAN CHENG; QIAN ZHOU et al.Solid-state electronics. 2013, Vol 83, pp 37-41, issn 0038-1101, 5 p.Conference Paper

Development of epitaxial growth technology for Ge1―xSnx alloy and study of its properties for Ge nanoelectronicsNAKATSUKA, Osamu; SHIMURA, Yosuke; TAKEUCHI, Wakana et al.Solid-state electronics. 2013, Vol 83, pp 82-86, issn 0038-1101, 5 p.Conference Paper

Characterization of anisotropic strain relaxation after isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman methodUSUDA, Koji; TEZUKA, Tsutomu; KOSEMURA, Daisuke et al.Solid-state electronics. 2013, Vol 83, pp 46-49, issn 0038-1101, 4 p.Conference Paper

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